Datasheet Details
Part number:
IRF8910
Manufacturer:
International Rectifier
File Size:
274.54 KB
Description:
HEXFET Power MOSFET
IRF8910_InternationalRectifier.pdf
Datasheet Details
Part number:
IRF8910
Manufacturer:
International Rectifier
File Size:
274.54 KB
Description:
HEXFET Power MOSFET
Features
* d off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility toApplications
* l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating VDSS 20V 13.4m:@VGS = 10V 1 2 3 4 RDS(on) maxIRF8910 Distributors
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