* d off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to
IRF8910
International Rectifier
274.54 KB
Hexfet power mosfet.
PD - 95868
IRF8910
HEXFET® Power MOSFET
Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set.
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