IRF8910 Datasheet - International Rectifier

IRF8910 HEXFET Power MOSFET

PD - 95868 IRF8910 HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating VDSS 20V 13.4m:@VGS = 10V 1 2 3 4 RDS(on) max ID 10A S1 G1 S2 G2 8 7 6 5 D1 D1 D2 D2 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = .

IRF8910 Features

* d off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to

IRF8910_InternationalRectifier.pdf