IRF8915 Datasheet - International Rectifier

IRF8915 HEXFETPower MOSFET

PD - 95858 IRF8915 HEXFET® Power MOSFET Applications Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box VDSS 20V 18.3m:@VGS = 10V RDS(on) max ID 8.9A S1 G1 1 8 7 D1 D1 D2 D2 2 Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current S2 G2 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain.

IRF8915 Features

* more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching

IRF8915_InternationalRectifier.pdf