* y the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt
IRF8915PBF Datasheet (214.61 KB)
IRF8915PBF
International Rectifier
214.61 KB
Hexfet power mosfet.
PD -95727
IRF8915PbF
HEXFET® Power MOSFET
Applications Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set.
📁 Related Datasheet
IRF8915 HEXFETPower MOSFET (International Rectifier)
IRF8910 HEXFET Power MOSFET (International Rectifier)
IRF8910GPBF Power MOSFET (International Rectifier)
IRF8910PBF HEXFET Power MOSFET (International Rectifier)
IRF8910PBF-1 Power MOSFET (International Rectifier)
IRF8010 HEXFET Power MOSFET (International Rectifier)
IRF8010 N-Channel MOSFET (INCHANGE)
IRF8010L SMPS MOSFET (International Rectifier)
IRF8010L N-Channel MOSFET (INCHANGE)
IRF8010LPBF HEXFET Power MOSFET (International Rectifier)
