IRF8915PBF - HEXFET Power MOSFET
PD -95727 IRF8915PbF HEXFET® Power MOSFET Applications Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l Lead-Free VDSS 20V 18.3m:@VGS = 10V RDS(on) max ID 8.9A S1 G1 1 8 7 D1 D1 D2 D2 2 Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current www.DataSheet4U.com S2 G2 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA
IRF8915PBF Features
* y the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt
