IRF8910GPBF Datasheet - International Rectifier

IRF8910GPBF Power MOSFET

PD -96257 IRF8910GPbF HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l l VDSS 20V 13.4m:@VGS = 10V 1 2 3 4 RDS(on) max ID 10A Lead-Free Halogen-Free S1 G1 8 7 6 5 D1 D1 D2 D2 Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating S2 G2 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = .

IRF8910GPBF Features

* + Poutput This can be expanded and approximated by; ⎛Q ⎞ + ⎜ oss × Vin × f + (Qrr × Vin × f ) ⎝ 2 ⎠

* dissipated primarily in Q1. For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three

IRF8910GPBF Datasheet (308.69 KB)