* n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Continuous Drain Current Continuous Drain Current Pulsed Drain
IRFF420
International Rectifier
185.79 KB
Hexfet transistors.
PD - 90429D IRFF420 JANTX2N6794 REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6794 HEXFET®TRANSISTORS REF:MIL-PRF-19500/555 THRU-HOLE (TO-205AF).
📁 Related Datasheet
IRFF420 N-Channel Power MOSFET (Seme LAB)
IRFF420 N-Channel Power MOSFET (Intersil Corporation)
IRFF420 FIELD EFFECT POWER TRANSISTOR (GE)
IRFF421 FIELD EFFECT POWER TRANSISTOR (GE)
IRFF422 FIELD EFFECT POWER TRANSISTOR (GE)
IRFF423 FIELD EFFECT POWER TRANSISTOR (GE)
IRFF430 N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Seme LAB)
IRFF430 N-Channel Power MOSFET (Intersil Corporation)
IRFF430 HEXFET TRANSISTORS (International Rectifier)
IRFF430 FIELD EFFECT POWER TRANSISTOR (GE)
