IRFIZ34VPBF Datasheet - International Rectifier

IRFIZ34VPBF HEXFET Power MOSFET

l HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 28mΩ G S ID = 20A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device .

IRFIZ34VPBF Features

* es "L ead-F ree" D AT E CO D E Y E AR 9 = 1 9 9 9 W E E K 24 L IN E K Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El

IRFIZ34VPBF_InternationalRectifier.pdf