IRFIZ34V Datasheet (International Rectifier)

IRFIZ34V, Power MOSFET

l D VDSS = 60V RDS(on) = 28mΩ G S ID = 20A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET po

IRFIZ34V Features

* H . 3.30 (.130) 3.10 (.122) -B 1 3.70 (.54 0) 1 3.50 (.53 0) C D A 1.40 (.05 5) 3X 1.05 (.04 2) 2.54 (.1 00) 2X 3X 0.9 0 (.0 35) 0.7 0 (.0 28) 0.25 (.01 0) M A M B 3X 0.48 (.0 19) 0.44 (.0 17) B 2.85 (.112) 2.65 (.104) M IN IM U M C RE E P A G E D IS T A N C E B E TW E E N A -B -C -D = 4.80 (.1