Datasheet Details
- Part number
- IRFIZ34EPBF
- Manufacturer
- International Rectifier
- File Size
- 264.98 KB
- Datasheet
- IRFIZ34EPBF_InternationalRectifier.pdf
- Description
- HEXFET Power MOSFET
IRFIZ34EPBF Description
PD - 94839 IRFIZ34EPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist.= 4..
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRFIZ34EPBF Applications
* The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mic
📁 Related Datasheet
📌 All Tags