IRFIZ34EPBF Datasheet - International Rectifier

IRFIZ34EPBF, HEXFET Power MOSFET

PD - 94839 IRFIZ34EPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist.= 4..
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Datasheet Details

Part number:

IRFIZ34EPBF

Manufacturer:

International Rectifier

File Size:

264.98 KB

Description:

HEXFET Power MOSFET

Applications

* The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mic

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IRFIZ34EPBF HEXFET Power MOSFET International Rectifier

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