IRFIZ34E Datasheet - International Rectifier

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IRFIZ34E Power MOSFET

PD - 9.1674A IRFIZ34E HEXFET® Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead C.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

IRFIZ34E_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRFIZ34E

Manufacturer:

International Rectifier

File Size:

114.59 KB

Description:

Power MOSFET

Features

* O T ES : 1 D IM EN SION IN G & T O LER A N C IN G PE R AN S I Y14.5 M , 1982 2 C O N TR OLLIN G D IM EN S ION : IN C H . 3.30 (.130 ) 3.10 (.122 ) -B13 .7 0 (.540) 13 .5 0 (.530) C D A 1.40 (.05 5) 3X 1.05 (.04 2) 2 .54 (.100) 2X 0.9 0 (.035) 3X 0.7 0 (.028) 0.25 (.010 ) M A M B 3X 0.48 (.019) 0.

Applications

* The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mic

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IRFIZ34E Power MOSFET International Rectifier

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