IRFIZ34E Datasheet (International Rectifier)

IRFIZ34E, Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer

IRFIZ34E Features

* O T ES : 1 D IM EN SION IN G & T O LER A N C IN G PE R AN S I Y14.5 M , 1982 2 C O N TR OLLIN G D IM EN S ION : IN C H . 3.30 (.130 ) 3.10 (.122 ) -B13 .7 0 (.540) 13 .5 0 (.530) C D A 1.40 (.05 5) 3X 1.05 (.04 2) 2 .54 (.100) 2X 0.9 0 (.035) 3X 0.7 0 (.028) 0.25 (.010 ) M A M B 3X 0.48 (.019) 0.