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IRFIZ24N - N-Channel MOSFET

IRFIZ24N Description

Isc N-Channel MOSFET Transistor *.

IRFIZ24N Features

* With TO-220F package
* Low input capacitance and gate charge
* Low gate input resistance
* Reduced switching and conduction losses
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IRFIZ24N Applications

* Switching applications INCHANGE Semiconductor IRFIZ24N
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±20 14 10 68 PD Tot

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Datasheet Details

Part number
IRFIZ24N
Manufacturer
INCHANGE
File Size
197.08 KB
Datasheet
IRFIZ24N-INCHANGE.pdf
Description
N-Channel MOSFET

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