IRFIZ48N Datasheet - International Rectifier

IRFIZ48N, Power MOSFET

PD 9.1407 PRELIMINARY IRFIZ48N HEXFET® Power MOSFET D l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sin.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Datasheet Details

Part number:

IRFIZ48N

Manufacturer:

International Rectifier

File Size:

109.29 KB

Description:

Power MOSFET

Features

* 2.85 (.112) 2.65 (.104) MINIMUM CREEPAGE DISTANCE BETWEEN A-B-C-D = 4.80 (.189) Part Marking EXAMPLE : THIS IS AN IRFI840G EXAMPLE : THIS IS AN IRF1010 WITH ASSEMBLY WITH ASSEMBLY CODE E401 LOTLOT CODE 9B1M A INTERNATIONAL INTERNATIONAL RECTIFIER IRF1010 RECTIFIER IRFI840G LOGO 9246 LOGO 9B E401

Applications

* The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mic

IRFIZ48N Distributors

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IRFIZ48N Power MOSFET International Rectifier

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