Datasheet Details
- Part number
- IRFIZ48N
- Manufacturer
- International Rectifier
- File Size
- 109.29 KB
- Datasheet
- IRFIZ48N_InternationalRectifier.pdf
- Description
- Power MOSFET
IRFIZ48N Description
PD 9.1407 PRELIMINARY IRFIZ48N HEXFET® Power MOSFET D l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sin.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRFIZ48N Features
* 2.85 (.112) 2.65 (.104)
MINIMUM CREEPAGE DISTANCE BETWEEN A-B-C-D = 4.80 (.189)
Part Marking
EXAMPLE : THIS IS AN IRFI840G EXAMPLE : THIS IS AN IRF1010 WITH ASSEMBLY WITH ASSEMBLY CODE E401 LOTLOT CODE 9B1M
A
INTERNATIONAL INTERNATIONAL RECTIFIER IRF1010 RECTIFIER IRFI840G LOGO 9246 LOGO 9B E401
IRFIZ48N Applications
* The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mic
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