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IRFIZ48VPbF Power MOSFET

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Description

l Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS ˆ l Fast Switching l Fully Avalanche Ra.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon.

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Features

* Y L OT CODE IR F I840G 924K 34 32 P AR T NU MB E R DAT E CODE YE AR 9 = 1999 WE E K 24 LINE K Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUAR

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