IRFIZ48V Datasheet - International Rectifier

Power MOSFET

IRFIZ48V Features

* OTES: 1 D IME N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982 2 C O N TR O LLIN G D IM E N S IO N : IN C H . 3.30 (.130) 3.10 (.122) -B13.70 (.540) 13.50 (.530) C D A 1.40 (.055) 3X 1.05 (.042) 2.54 (.100) 2X 0.90 (.035) 3X 0.70 (.028) 0.25 (.010) M A M B 3X 0.48 (.019) 0.44 (.017)

IRFIZ48V General Description

l l D VDSS = 60V RDS(on) = 12mΩ G S ID = 39A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET .

IRFIZ48V Datasheet (93.31 KB)

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IRFIZ48V

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International Rectifier

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93.31 KB

Description:

Power mosfet.
PD-94072 IRFIZ48V HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS l.

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IRFIZ48V Power MOSFET International Rectifier

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IRFIZ48V Features

IRFIZ48V General Description

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