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IRG4BC10S - INSULATED GATE BIPOLAR TRANSISTOR

IRG4BC10S Description

www.DataSheet4U.com PD - 91786A IRG4BC10S INSULATED GATE BIPOLAR TRANSISTOR .

IRG4BC10S Features

* Extremely low voltage drop; 1.1V typical at 2A

IRG4BC10S Applications

* Very Tight Vce(on) distribution
* Industry standard TO-220AB package C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.10V @VGE = 15V, IC = 2.0A n-channel Benefits
* Generation 4 IGBTs offer highest efficiency available
* IGBTs optimized for specified appli

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Datasheet Details

Part number
IRG4BC10S
Manufacturer
International Rectifier
File Size
182.37 KB
Datasheet
IRG4BC10S_InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRG4BC10S-like datasheet