IRG4BC10SD-S, IRG4BC10SD-L Datasheet - International Rectifier

IRG4BC10SD-S - (IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR

IRG4BC10SD-S Features

* Extremely low voltage drop 1.1Vtyp. @ 2A

* S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.

* Very Tight Vce(on) distribution

* IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery a

Datasheet Details

IRG4BC10SD-S, IRG4BC10SD-L

International Rectifier

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(irg4bc10sd-l/-s) insulated gate bipolar transistor.

This datasheet PDF includes multiple part numbers: IRG4BC10SD-S, IRG4BC10SD-L.
Please refer to the document for exact specifications by model.

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