IRG4BC10SD-S, IRG4BC10SD-L Datasheet - International Rectifier

IRG4BC10SD-S (IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR

IRG4BC10SD-S Features

* Extremely low voltage drop 1.1Vtyp. @ 2A

* S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.

* Very Tight Vce(on) distribution

* IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery a

Datasheet Details

IRG4BC10SD-S, IRG4BC10SD-L

International Rectifier

243.53 KB

(irg4bc10sd-l/-s) insulated gate bipolar transistor.

This datasheet PDF includes multiple part numbers: IRG4BC10SD-S, IRG4BC10SD-L.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

IRG4BC10SD-L (IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC10SD-LPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC10SD-SPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC10SDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC10S INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC10K Short Circuit Rated UltraFast IGBT (International Rectifier)

IRG4BC10KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC10KDPBF HEXFET Power MOSFET (International Rectifier)

TAGS

IRG4BC10SD-S Distributor