Part number:
IRG4BC10SDPBF
Manufacturer:
International Rectifier
File Size:
293.74 KB
Description:
Insulated gate bipolar transistor.
Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
---|---|---|---|---|---|---|---|---|
![]() |
Infineon Technologies AG | IRG4BC10SDPBF | IGBT 600V 14A TO-220AB | DigiKey | 0 | 0 |
$0
|
🛒 Buy Now |
IRG4BC10SDPBF Datasheet (293.74 KB)
IRG4BC10SDPBF
International Rectifier
293.74 KB
Insulated gate bipolar transistor.
* C Standard Speed CoPack IGBT VCES = 600V
* Extremely low voltage drop 1.1Vtyp. @ 2A
* S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.
* Very Tight Vce(on) distribution
* IGBT co-packaged with
📁 Related Datasheet
IRG4BC10SD-L - (IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
..
PD - 94255
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Extremely low voltage drop 1.1Vtyp. @.
IRG4BC10SD-LPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
..
PD - 95780
IRG4BC10SD-SPbF IRG4BC10SD-LPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Extre.
IRG4BC10SD-S - (IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
..
PD - 94255
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Extremely low voltage drop 1.1Vtyp. @.
IRG4BC10SD-SPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
..
PD - 95780
IRG4BC10SD-SPbF IRG4BC10SD-LPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Extre.
IRG4BC10S - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
..
PD - 91786A
IRG4BC10S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Extremely low voltage drop; 1.1V typical at 2A • S-Speed: Min.
IRG4BC10K - Short Circuit Rated UltraFast IGBT
(International Rectifier)
..
PD - 91733A
IRG4BC10K
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Short Circuit Rated UltraFast: Optimized for high operating f.