IRG4BC10SD-LPBF Datasheet - International Rectifier

IRG4BC10SD-LPBF - INSULATED GATE BIPOLAR TRANSISTOR

IRG4BC10SD-LPBF Features

* Extremely low voltage drop 1.1Vtyp. @ 2A

* S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.

* Very Tight Vce(on) distribution

* IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery a

Datasheet Details

IRG4BC10SD-LPBF

International Rectifier

352.49 KB

Insulated gate bipolar transistor.

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