IRG4BC10SD-LPBF Datasheet, Bipolar Transistor, International Rectifier

Insulated gate bipolar transistor

IRG4BC10SD-LPBF

International Rectifier

352.49 KB

Insulated gate bipolar transistor.
.

Extremely low voltage drop 1.1Vtyp. @ 2A
S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.

📁 Related Datasheet

IRG4BC10SD-L - (IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC10SD-S - (IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC10SD-SPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC10SDPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC10S - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC10K - Short Circuit Rated UltraFast IGBT (International Rectifier)

IRG4BC10KD - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC10KDPBF - HEXFET Power MOSFET (International Rectifier)

TAGS