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IRG4CC50UB

IGBT Die

IRG4CC50UB General Description

Guaranteed (Min/Max) Test Conditions VCE (on) V(BR)CES VGE(th) ICES IGES Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current 2.0V Max. 600V Min. 3.0V Min., 6.0V Max. 250µA Max. ±.

IRG4CC50UB Datasheet (60.10 KB)

Preview of IRG4CC50UB PDF

Datasheet Details

Part number:

IRG4CC50UB

Manufacturer:

International Rectifier

File Size:

60.10 KB

Description:

Igbt die.
IRG4CC50UB IGBT Die in Wafer Form PD- 91764A IRG4CC50UB C G E 600 V Size 5 Ultra-Fast Speed 6" Wafer Electrical Characteristics ( Wafer Form ) Pa.

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IRG4CC50UB IGBT Die International Rectifier

IRG4CC50UB Distributor