IRG4CC50UB Datasheet, Die, International Rectifier

PDF File Details

Part number:

IRG4CC50UB

Manufacturer:

International Rectifier

File Size:

60.10kb

Download:

📄 Datasheet

Description:

Igbt die. Guaranteed (Min/Max) Test Conditions VCE (on) V(BR)CES VGE(th) ICES IGES Collector-to-Emitter Saturation Voltage Colletor-to-Emit

TAGS

IRG4CC50UB

International Rectifier

📁 Related Datasheet

IRG4CC50WB - IGBT Die (International Rectifier)
PD- 91836A IRG4CC50WB IRG4CC50WB IGBT Die in Wafer Form C 600 V Size 5 WARP Speed G E 6 Wafer Electrical Characteristics ( Wafer Form ) Parameter.

IRG4CC20FB - IGBT Die (International Rectifier)
IRG4CC20FB IGBT Die in Wafer Form PD- 91831A IRG4CC20FB C G E 600 V Size 2 Fast Speed 6 Wafer Electrical Characteristics ( Wafer Form ) Paramete.

IRG4CC71KB - IGBT Die (International Rectifier)
.. PD- 91834A IRG4CC71KB IRG4CC71KB IGBT Die in Wafer Form C 600 V Size 7.1 Ultra-Fast Speed Circuit Rated Rated G E 6 Wafer E.

IRG4CH40SB - IGBT Die (International Rectifier)
.. PD-91799A IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form C G E 1200 V Size 4 Standard Speed 6 Wafer Electrical Characteristics.

IRG41BC10UDPBF - Insulated Gate Bipolar Transistor (International Rectifier)
PD - 95603 IRG4IBC10UDPbF • Lead-Free .irf. 1 7/28/04 .. .. .. IRG4IBC10UDPbF 2 ..

IRG41BC30UD - Ultra Fast CoPack IGBT (International Rectifier)
PD91753A IRG4IBC30UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapag.

IRG4BC10K - Short Circuit Rated UltraFast IGBT (International Rectifier)
.. PD - 91733A IRG4BC10K INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating f.

IRG4BC10KD - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
.. PD -91734B IRG4BC10KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating .

IRG4BC10KDPBF - HEXFET Power MOSFET (International Rectifier)
PD -94903 IRG4BC10KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Short Circuit Rated UltraFast IGBT VCES = 60.

IRG4BC10S - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
.. PD - 91786A IRG4BC10S INSULATED GATE BIPOLAR TRANSISTOR Features • Extremely low voltage drop; 1.1V typical at 2A • S-Speed: Min.