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IRG4CC50WB

IGBT Die

IRG4CC50WB General Description

Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Guaranteed (Min/Max) 2.3V Max. 600V Min. 3.0V Min., 6.0V Max. 250 µA Max. ± 1.1 µA Max. Test Conditions IC = 10A, TJ = 25°C, VGE = .

IRG4CC50WB Datasheet (29.73 KB)

Preview of IRG4CC50WB PDF

Datasheet Details

Part number:

IRG4CC50WB

Manufacturer:

International Rectifier

File Size:

29.73 KB

Description:

Igbt die.
PD- 91836A IRG4CC50WB IRG4CC50WB IGBT Die in Wafer Form C 600 V Size 5 WARP Speed G E 6" Wafer Electrical Characteristics ( Wafer Form ) Parameter.

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IRG4CC50WB IGBT Die International Rectifier

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