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IRG4CH40SB

IGBT Die

IRG4CH40SB General Description

Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Guaranteed (Min/Max) Test Conditions 4.5V Max. IC = 10A, TJ = 25°C, VGE = 15V 1200V Min. TJ = 25°C, ICES = 250µA, VGE = 0V 3.0V Min.

IRG4CH40SB Datasheet (45.23 KB)

Preview of IRG4CH40SB PDF

Datasheet Details

Part number:

IRG4CH40SB

Manufacturer:

International Rectifier

File Size:

45.23 KB

Description:

Igbt die.
www.DataSheet4U.com PD-91799A IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form C G E 1200 V Size 4 Standard Speed 6" Wafer Electrical Characteristics.

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IRG4CH40SB IGBT Die International Rectifier

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