IRG4IBC20FDPBF Datasheet, Transistor, International Rectifier

IRG4IBC20FDPBF Features

• Transistor C
• Very Low 1.66V votage drop
• 2.5kV, 60s insulation voltage …
• 4.8 mm creapage distance to heatsink
• Fast: Optimized for medium operating freque

PDF File Details

Part number:

IRG4IBC20FDPBF

Manufacturer:

International Rectifier

File Size:

292.27kb

Download:

📄 Datasheet

Description:

Insulated gate bipolar transistor.

TAGS

IRG4IBC20FDPBF

International Rectifier

📁 Related Datasheet

IRG4IBC20KD - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE (International Rectifier)
PD -91689A IRG4IBC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High switching speed optimized for up to 25kHz.

IRG4IBC20KDPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
.. PD -94916 IRG4IBC20KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Short Circuit Rated Ul.

IRG4IBC20UD - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE (International Rectifier)
PD -91752A IRG4IBC20UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • 2.5kV, 60s insulation voltage U • 4.8 mm creap.

IRG4IBC20UDPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
PD -94917A IRG4IBC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE Features C • 2.5kV, 60s in.

IRG4IBC20W - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
PD 91785A IRG4IBC20W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) .

IRG4IBC20WPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
.. PD -95636 IRG4IBC20WPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (.

IRG4IBC10UD - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE (International Rectifier)
PD - 93765 IRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast Co-Pack IGBT VCES = 600V VCE(on) typ. = 2.15.

IRG4IBC30FD - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE (International Rectifier)
PD- 91751A IRG4IBC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Very Low 1.59V votage drop 2.5kV, 60s in.

IRG4IBC30KD - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE (International Rectifier)
PD -91690A IRG4IBC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High switching speed optimized for up to 25kHz.

IRG4IBC30KDPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
PD -95597A IRG4IBC30KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High switching speed optimized for up to 2.