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IRG4IBC20FDPBF INSULATED GATE BIPOLAR TRANSISTOR

IRG4IBC20FDPBF Description

PD -94915A IRG4IBC20FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

IRG4IBC20FDPBF Features

* C
* Very Low 1.66V votage drop
* 2.5kV, 60s insulation voltage …
* 4.8 mm creapage distance to heatsink
* Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 G kHz in resonant mode).
* IGBT co-packaged with HEXFREDTM ultrafa

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRG4IBC20FDPBF-like datasheet