IRG4IBC20UDPBF Datasheet, Transistor, International Rectifier

IRG4IBC20UDPBF Features

• Transistor C
• 2.5kV, 60s insulation voltage …
• 4.8 mm creapage distance to heatsink VCES = 600V
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard

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Part number:

IRG4IBC20UDPBF

Manufacturer:

International Rectifier

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303.36kb

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📄 Datasheet

Description:

Insulated gate bipolar transistor.

IRG4IBC20UDPBF Application

• Applications - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 Ic tx 10% Vcc Vpk Irr trr trr ∫Qrr = id dt tx 10% Irr Vcc DI

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IRG4IBC20UDPBF

International Rectifier

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