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IRG4IBC20KDPBF INSULATED GATE BIPOLAR TRANSISTOR

IRG4IBC20KDPBF Description

www.DataSheet4U.com PD -94916 IRG4IBC20KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

IRG4IBC20KDPBF Features

* C Short Circuit Rated UltraFast IGBT VCES = 600V
* High switching speed optimized for up to 25kHz with low VCE(on)
* Short Circuit Rating 10µs @ 125°C, VGE = 15V
* Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generatio

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRG4IBC20KDPBF-like datasheet