IRG4IBC20KDPBF

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

* C Short Circuit Rated UltraFast IGBT VCES = 600V

* High switching speed optimized for up to 25kHz with low VCE(on)

* Short Circuit Rating 10µs @ 125°C, VGE = 15V

* Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generatio

IRG4IBC20KDPBF

International Rectifier

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Insulated gate bipolar transistor.

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