IRG4IBC20KD - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier

Datasheet Details

Part number	IRG4IBC20KD
Manufacturer	International Rectifier
File Size	199.67 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Datasheet	IRG4IBC20KD_InternationalRectifier.pdf

High switching speed optimized for up to 25kHz with low VCE(on).
Short Circuit Rating 10µs @ 125°C, VGE = 15V.
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation.
IGBT co-packaged with.

📁 IRG4IBC20KD Similar Datasheet

Other Datasheets by International Rectifier

IRG4IBC20KDPBF - INSULATED GATE BIPOLAR TRANSISTOR
IRG4IBC20FDPBF - INSULATED GATE BIPOLAR TRANSISTOR
IRG4IBC20UD - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4IBC20UDPBF - INSULATED GATE BIPOLAR TRANSISTOR
IRG4IBC20W - INSULATED GATE BIPOLAR TRANSISTOR
IRG4IBC20WPBF - INSULATED GATE BIPOLAR TRANSISTOR

Published: Nov 24, 2005 |