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PD - 94911A
IRG4PC40FDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE Features
Fast: Optimized for medium operating
C
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in bridge configurations
G
E
n-channel
Industry standard TO-247AC package
Lead-Free
Benefits
Generation -4 IGBT's offer highest efficiencies
available
IGBT's optimized for specific application conditions
HEXFRED diodes optimized for performance with
IGBT's .
IRG4PC40FDPBF Datasheet
