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PD -95183
IRG4PC40WPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications
• Industry-benchmark switching losses improve efficiency of all power supply topologies
• 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and constructionoffers
tighter parameters distribution, exceptional reliability • Lead-Free
C
G E
n-channel
VCES = 600V VCE(on) typ. = 2.
IRG4PC40WPBF Datasheet
