IRG4RC10KD Datasheet - International Rectifier

IRG4RC10KD INSULATED GATE BIPOLAR TRANSISTO

IRG4RC10KD Features

* Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V

* Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation

* IGBT co-packaged with HE

Datasheet Details

IRG4RC10KD

International Rectifier

227.69 KB

Insulated gate bipolar transisto.

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