IRG4RC10SD Datasheet - International Rectifier

IRG4RC10SD INSULATED GATE BIPOLAR TRANSISTOR

IRG4RC10SD Features

* C

* Extremely low voltage drop 1.1V(typ) @ 2A

* S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.

* Tight parameter distribution

* IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery

Datasheet Details

IRG4RC10SD

International Rectifier

722.35 KB

Insulated gate bipolar transistor.

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