IRG4RC10SD - INSULATED GATE BIPOLAR TRANSISTOR
IRG4RC10SD Features
* C
* Extremely low voltage drop 1.1V(typ) @ 2A
* S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.
* Tight parameter distribution
* IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery
