IRG4RC10U - INSULATED GATE BIPOLAR TRANSISTOR
IRG4RC10U Features
* UltraFast: Optimized for high operating frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode)
* Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation
* Industry standard TO-252AA package C UltraFast S
