IRG4RC10U Datasheet - International Rectifier

IRG4RC10U INSULATED GATE BIPOLAR TRANSISTOR

IRG4RC10U Features

* UltraFast: Optimized for high operating frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode)

* Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation

* Industry standard TO-252AA package C UltraFast S

Datasheet Details

IRG4RC10U

International Rectifier

167.67 KB

Insulated gate bipolar transistor.

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