| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
 |
Infineon Technologies AG | IRG7PSH73K10PBF | IGBT TRENCH 1200V 220A SUPER-247 | DigiKey | 0 | 0 |
$0
|
🛒 Buy Now |
Download Datasheet (384.62 KB)
IRG7PSH73K10PbF
International Rectifier
384.62 KB
Insulated gate bipolar transistor.
INSULATED GATE BIPOLAR TRANSISTOR
Features
* Low VCE (ON) Trench IGBT Technology * Low Switching Los.
ses * Maximum Junction Temperature 175 °C * 10 μS short Circuit SOA * Square RBSOA * 100% of The Par.
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