IRG7S313U Features
* Key Parameters l Advanced Trench IGBT Technology VCE min 330 V l Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 20A 1.35 V circuits in PDP applications l Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency IRP max @ TC= 25°C TJ max 160 A 150 °C l
IRG7S313UPBF_InternationalRectifier.pdf
Datasheet Details
IRG7S313U, IRG7S313UPBF
International Rectifier
272.87 KB
Pdp trench igbt.
This datasheet PDF includes multiple part numbers: IRG7S313U, IRG7S313UPBF.
Please refer to the document for exact specifications by model.
IRG7S313U Distributor
📁 Related Datasheet
IRG7S313UPBF PDP TRENCH IGBT (International Rectifier)
IRG7S319UPBF PDP TRENCH IGBT (International Rectifier)
IRG7SC12FPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7SC28UPbF PDP Trench IGBT (International Rectifier)
IRG71C28U PDP TRENCH IGBT (International Rectifier)
IRG7I313UPBF PDP TRENCH IGBT (International Rectifier)
IRG7IC28U PDP TRENCH IGBT (International Rectifier)
IRG7IC28UPBF PDP TRENCH IGBT (International Rectifier)
