IRG7SC12FPBF Datasheet - International Rectifier

IRG7SC12FPBF, INSULATED GATE BIPOLAR TRANSISTOR

PD - 96363 IRG7SC12FPbF INSULATED GATE BIPOLAR TRANSISTOR .

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IRG7SC12FPBF_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRG7SC12FPBF

Manufacturer:

International Rectifier

File Size:

314.80 KB

Description:

INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (ON) Trench IGBT Technology Maximum Junction temperature 150 °C 3 μS short circuit SOA Square RBSOA Positive VCE (ON) Temperature co-efficient Tight parameter distribution Lead Free Package C VCES = 600V IC = 8A, TC = 100

Applications

* Rugged transient Performance for increased reliability Excellent Current sharing in parallel operation Low EMI www. DataSheet. net/ E G D2Pak IRG7SC12FPbF G Gate C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM ILM VGE PD @ TC = 25°C PD @

IRG7SC12FPBF Distributors

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IRG7SC12FPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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