IRG7S313U - PDP TRENCH IGBT
(International Rectifier)
PDP TRENCH IGBT
PD - 97402A
IRG7S313UPbF
Features
Key Parameters
l Advanced Trench IGBT Technology
VCE min
330
V
l Optimized for Sustain and E.
IRG7S313UPBF - PDP TRENCH IGBT
(International Rectifier)
PD - 97402A
PDP TRENCH IGBT
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l.
IRG7SC12FPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 96363
IRG7SC12FPbF
INSULATED GATE BIPOLAR TRANSISTOR Features
• • • • • • • Low VCE (ON) Trench IGBT Technology Maximum Junction temperature 150.
IRG7SC28UPbF - PDP Trench IGBT
(International Rectifier)
PD - 97569A
PDP TRENCH IGBT
IRG7SC28UPbF
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery
circuits in PDP appli.
IRG71C28U - PDP TRENCH IGBT
(International Rectifier)
PDP TRENCH IGBT
PD - 97562
IRG7IC28UPbF
Features l Advanced Trench IGBT Technology
Key Parameters
VCE min
600
V
l Optimized for Sustain and Ene.
IRG7I313UPBF - PDP TRENCH IGBT
(International Rectifier)
PD - 97411
PDP TRENCH IGBT
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l .