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IRG8P60N120KD-EPbF Datasheet - International Rectifier

IRG8P60N120KD-EPbF INSULATED GATE BIPOLAR TRANSISTOR

IRG8P60N120KD-EPbF Features

* Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant Benefits High Efficiency in a Motor Drive Applications Increases margin for short circuit protection scheme Excellent Current Sharing in Parallel Operat

IRG8P60N120KD-EPbF Datasheet (671.72 KB)

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Datasheet Details

Part number:

IRG8P60N120KD-EPbF

Manufacturer:

International Rectifier

File Size:

671.72 KB

Description:

Insulated gate bipolar transistor.

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IRG8P60N120KD-EPbF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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