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IRGI4061DPBF - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Low VCE (on) Trench IGBT Technology Low Switching Losses 5µs SCSOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free Package G E C VCES = 600V IC = 11A, TC = 100°C tsc > 5µs, Tjmax = 150°C n-channel C VCE(on) typ. = 1.35V Benefits.
  • High Efficiency in a Wide Range of Applica.

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PD - 97114 IRGI4061DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • Low VCE (on) Trench IGBT Technology Low Switching Losses 5µs SCSOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free Package G E C VCES = 600V IC = 11A, TC = 100°C tsc > 5µs, Tjmax = 150°C n-channel C VCE(on) typ. = 1.
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