IRGI4061DPBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRGI4061DPBF
Manufacturer	International Rectifier
File Size	311.12 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGI4061DPBF_InternationalRectifier.pdf

Low VCE (on) Trench IGBT Technology Low Switching Losses 5µs SCSOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free Package G E C VCES = 600V IC = 11A, TC = 100°C tsc > 5µs, Tjmax = 150°C n-channel C VCE(on) typ. = 1.35V Benefits.
High Efficiency in a Wide Range of Applica.

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Published: Nov 9, 2010 |