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IRGIH50F INSULATED GATE BIPOLAR TRANSISTOR

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Description

PD -90930B IRGIH50F INSULATED GATE BIPOLAR TRANSISTOR .
n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar trans.

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Datasheet Specifications

Part number
IRGIH50F
Manufacturer
International Rectifier
File Size
565.05 KB
Datasheet
IRGIH50F_InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR

Features

* Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses C Fast Speed IGBT VCES = 1200V G E VCE(on) m

Applications

* The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handling capability of the device. www. DataSheet4U. com TO-259AA Absolute Maximum Rating

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