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IRGR2B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR

IRGR2B60KDPBF Description

  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE IRGR2B60KDPbF  C   VCES = 600V IC = 3.7A, TC = 100°C G E .

IRGR2B60KDPBF Features

*  Low VCE (ON) Non Punch Through IGBT technology
*  Low Diode VF
*  10µs Short Circuit Capability
*  Square RBSOA
*  Ultra-soft Diode Reverse Recovery Characteristics
*  Positive VCE (ON) temperature co-efficient
*  Lead-free Benefits
*  Benchmark Efficiency for Moto

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRGR2B60KDPBF-like datasheet