IRGR2B60KDPBF Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

*  Low VCE (ON) Non Punch Through IGBT technology

*  Low Diode VF

*  10µs Short Circuit Capability

*  Square RBSOA

*  Ultra-soft Diode Reverse Recovery Characteristics

*  Positive VCE (ON) temperature co-efficient

*  Lead-free Benefits

*  Benchmark Efficiency for Moto

IRGR2B60KDPBF

International Rectifier

762.68 KB

Insulated gate bipolar transistor.

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