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IRGR3B60KD2 Datasheet - International Rectifier

IRGR3B60KD2 INSULATED GATE BIPOLAR TRANSISTOR

IRGR3B60KD2 Features

* Low VCE (on) Non Punch Through IGBT Technology.

* Low Diode VF.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Ultrasoft Diode Reverse Recovery Characteristics.

* Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 4.2A, TC=100°C G E t

Datasheet Details

IRGR3B60KD2

International Rectifier

282.31 KB

Insulated gate bipolar transistor.

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