IRGR4607DPbF Features
* Low VCE(ON) and Switching Losses 5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient G Gate C Collector E Emitter Benefits High Efficiency in a Wide Range of Applications Rugged Transient Performance Increased Reliability Excellent
IRGS4607DPBF-InternationalRectifier.pdf
Datasheet Details
IRGR4607DPbF, IRGS4607DPBF
International Rectifier
821.57 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRGR4607DPbF, IRGS4607DPBF.
Please refer to the document for exact specifications by model.
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IRGR4607DPbF Distributor
