Datasheet4U Logo Datasheet4U.com

IRGR3B60KD2PBF Insulated Gate Bipolar Transistor

IRGR3B60KD2PBF Description

PD - 95036 IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

IRGR3B60KD2PBF Features

* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient.
* Lead-Free Benefits
* B

📥 Download Datasheet

Preview of IRGR3B60KD2PBF PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRG4BC20F - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20FD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20FD-S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20K - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20K-S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20KD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20KD-S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20MD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)

📌 All Tags

Insulated Gate Bipolar Transistor International Rectifier
International Rectifier IRGR3B60KD2PBF-like datasheet