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IRGR3B60KD2PBF - Insulated Gate Bipolar Transistor

International Rectifier

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Datasheet Details

Part number	IRGR3B60KD2PBF
Manufacturer	International Rectifier
File Size	306.76 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGR3B60KD2PBF-InternationalRectifier.pdf

IRGR3B60KD2PBF Product details

Features

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Lead-Free Benefits.
Benchmark Efficiency for Motor Control. C G E n-channel.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation. VCES = 600V IC = 4.2A,.

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Published: Feb 16, 2016 |