IRGR3B60KD2PBF Datasheet - International Rectifier

Insulated Gate Bipolar Transistor

* Low VCE (on) Non Punch Through IGBT Technology.

* Low Diode VF.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Ultrasoft Diode Reverse Recovery Characteristics.

* Positive VCE (on) Temperature Coefficient.

* Lead-Free Benefits

* B

IRGR3B60KD2PBF

International Rectifier

306.76 KB

Insulated gate bipolar transistor.

📁 Related Datasheet

IRGR3B60KD2 INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGR2B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGR4045DPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGR4607DPbF Insulated Gate Bipolar Transistor (International Rectifier)

IRGR4610DPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG41BC10UDPBF Insulated Gate Bipolar Transistor (International Rectifier)

IRG41BC30UD Ultra Fast CoPack IGBT (International Rectifier)

IRG4BC10K Short Circuit Rated UltraFast IGBT (International Rectifier)

IRG4BC10KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC10KDPBF HEXFET Power MOSFET (International Rectifier)

TAGS

Image Gallery