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IRGVH50F Datasheet - International Rectifier

IRGVH50F_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRGVH50F

Manufacturer:

International Rectifier

File Size:

561.39 KB

Description:

Insulated gate bipolar transistor.

IRGVH50F, INSULATED GATE BIPOLAR TRANSISTOR

n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

They provide substantial benefits to a host of hig

IRGVH50F Features

* Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses C Fast Speed IGBT VCES = 1200V G E VCE(on) m

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