Datasheet Details
Part number:
IRGVH50F
Manufacturer:
International Rectifier
File Size:
561.39 KB
Description:
Insulated gate bipolar transistor.
IRGVH50F_InternationalRectifier.pdf
Datasheet Details
Part number:
IRGVH50F
Manufacturer:
International Rectifier
File Size:
561.39 KB
Description:
Insulated gate bipolar transistor.
IRGVH50F, INSULATED GATE BIPOLAR TRANSISTOR
n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of hig
IRGVH50F Features
* Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses C Fast Speed IGBT VCES = 1200V G E VCE(on) m
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