IRG4BC10KDPBF Datasheet - International Rectifier

IRG4BC10KDPBF, HEXFET Power MOSFET

PD -94903 IRG4BC10KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features

* C Short Circuit Rated UltraFast IGBT VCES = 600V
* High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V
* Combines low conduction losses with high switching speed
* Tighter parameter distribution and higher efficiency th

IRG4BC10KDPBF_InternationalRectifier.pdf