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IRG4BC10KDPBF - HEXFET Power MOSFET

IRG4BC10KDPBF Description

PD -94903 IRG4BC10KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

IRG4BC10KDPBF Features

* C Short Circuit Rated UltraFast IGBT VCES = 600V
* High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V
* Combines low conduction losses with high switching speed
* Tighter parameter distribution and higher efficiency th

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International Rectifier IRG4BC10KDPBF-like datasheet