IRG4BC10KD Datasheet - International Rectifier

IRG4BC10KD - INSULATED GATE BIPOLAR TRANSISTOR

IRG4BC10KD Features

* High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V

* Combines low conduction losses with high switching speed

* Tighter parameter distribution and higher efficiency than previous generations

* IGBT co-packaged

Datasheet Details

IRG4BC10KD

International Rectifier

235.82 KB

Insulated gate bipolar transistor.

IRG4BC10KD Distributor

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