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IRF6662TRPBF, IRF6662PBF Power MOSFET

IRF6662TRPBF Description

PD - 97243A DirectFET™ Power MOSFET RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for High Performance I.
The IRF6662PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resi.

IRF6662TRPBF Features

* e-Drain Diode Forward Voltage 10 Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 7.0 ID = 100µA ID = 250µA 8 ID, Drain Current (A) 6.0 ID = 1.0mA ID = 1.0A 6 5.0 4 4.0 2 3.0 0 25 50 75 100 125 150 T A , Ambient Temperature (°C) 2.0 -75 -50 -25 0 25 50 75 100

IRF6662TRPBF Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best therma

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This datasheet PDF includes multiple part numbers: IRF6662TRPBF, IRF6662PBF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRF6662TRPBF, IRF6662PBF
Manufacturer
International Rectifier
File Size
271.77 KB
Datasheet
IRF6662PBF-InternationalRectifier.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IRF6662TRPBF, IRF6662PBF.
Please refer to the document for exact specifications by model.

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