Datasheet Details
- Part number
- IRF7606
- Manufacturer
- International Rectifier
- File Size
- 102.49 KB
- Datasheet
- IRF7606_InternationalRectifier.pdf
- Description
- Power MOSFET
IRF7606 Description
PD - 9.1264C IRF7606 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRF7606 Features
* N O TE S : 1 . O U TLIN E CO N FO RM S TO E IA -4 81 & E IA -54 1. 2 . C O NTRO LLING DIM E NS IO N : M IL LIM E TER . 330 .00 (1 2.9 92) MA X . 14.4 0 ( .56 6 ) 12.4 0 ( .48 8 ) NO TE S : 1. C O N T R O LL IN G D IM E N S IO N : M IL LIM E T E R . 2. O U T LIN E C O N F O R M S T O EIA -48 1 &
IRF7606 Applications
* The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (
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