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IRF7807PbF - HEXFET Chip-Set for DC-DC Converters

IRF7807PbF Description

PD * 95290 IRF7807PbF IRF7807APbF HEXFET® Chip-Set for DC-DC Converters * N Channel Application Specific MOSFETs * Ideal for.
These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge.

IRF7807PbF Features

* IRF7807 IRF7807A Vds 30V 30V Rds(on) 25mΩ 25mΩ Qg 17nC 17nC Qsw 5.2nC Qoss 16.8nC 16.8nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source 25°C Current (VGS ≥ 4.5V) Pulsed Drain Current 70°C Power Dissipation 25°C 70°C Junction

IRF7807PbF Applications

* This has been demonstrated with the 3.3V and 5V converters. (Fig 3 and Fig 4). In these applications the same MOSFET IRF7807 was used for both the control FET (Q1) and the synchronous FET (Q2). This provides a highly effective cost/performance solution. 3.3V Supply : Q1=Q2=IRF7807 5V Supply : Q1=

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Datasheet Details

Part number
IRF7807PbF
Manufacturer
International Rectifier
File Size
199.46 KB
Datasheet
IRF7807PbF-InternationalRectifier.pdf
Description
HEXFET Chip-Set for DC-DC Converters

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HEXFET Chip-Set for DC-DC Converters International Rectifier
International Rectifier IRF7807PbF-like datasheet

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