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IRF8910 - HEXFET Power MOSFET

IRF8910 Description

PD - 95868 IRF8910 HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set.

IRF8910 Features

* d off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to

IRF8910 Applications

* l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating VDSS 20V 13.4m:@VGS = 10V 1 2 3 4 RDS(on) max

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HEXFET Power MOSFET International Rectifier
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