Datasheet Details
| Part number | IRFP2907B |
|---|---|
| Manufacturer | International Rectifier ↗ |
| File Size | 47.00 KB |
| Description | HEXFET Power MOSFET |
| Datasheet |
 IRFP2907B_InternationalRectifier.pdf
|
| Part number | IRFP2907B |
|---|---|
| Manufacturer | International Rectifier ↗ |
| File Size | 47.00 KB |
| Description | HEXFET Power MOSFET |
| Datasheet |
IRFP2907B_InternationalRectifier.pdf
|
Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Leakage Current Operating Junction and Storage Temperature Range G S 75V RDS(on) = 2.5mΩ (typ.)∗∗∗ 6" Wafer Test Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 110A V DS = VGS, ID = 250µA VDS = 75V, VGS = 0V, TJ = 25°C V GS = ±20V Min Typ.Max 75V 2.5mΩ 4.5mΩ 2.0
📁 IRFP2907B Similar Datasheet