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IRFR4510PbF Power MOSFET

IRFR4510PbF Description

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High .

IRFR4510PbF Features

* cle in avalanche = tav
* f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3
* BV
* Iav) = DT/ ZthJC Iav = 2DT/ [1.3
* BV
* Zth] EAS (AR) = PD (ave)
* tav Fig 15. Maximum Avalanche Ene

IRFR4510PbF Applications

* l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode d

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Power MOSFET International Rectifier
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