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IRFU2307ZPbF, IRFR2307ZPbF Power MOSFET

IRFU2307ZPbF Description

PD - 96191B .
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

IRFU2307ZPbF Applications

* IRFR2307ZPbF IRFU2307ZPbF HEXFET® Power MOSFET D VDSS = 75V G RDS(on) = 16mΩ S ID = 42A D-Pak I-Pak IRFR2307ZPbF IRFU2307ZPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ™ID @ TC =

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This datasheet PDF includes multiple part numbers: IRFU2307ZPbF, IRFR2307ZPbF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRFU2307ZPbF, IRFR2307ZPbF
Manufacturer
International Rectifier
File Size
349.45 KB
Datasheet
IRFR2307ZPbF-InternationalRectifier.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IRFU2307ZPbF, IRFR2307ZPbF.
Please refer to the document for exact specifications by model.

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Power MOSFET International Rectifier
International Rectifier IRFU2307ZPbF-like datasheet